Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 3A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N3867
|
Microsemi | 类似代替 | TO-5 |
硅PNP功率晶体管 Silicon PNP Power Transistors
|
||
JANTX2N3867
|
Motorola | 类似代替 | TO-39 |
硅PNP功率晶体管 Silicon PNP Power Transistors
|
||
JANTX2N3867S
|
Microsemi | 类似代替 | TO-205 |
硅PNP功率晶体管 Silicon PNP Power Transistors
|
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