Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 1000 @6A, 3V
Technical parameters/rated power (Max): 150 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semelab | 类似代替 | TO-3 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6059
|
Multicomp | 类似代替 | TO-3 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6059
|
Central Semiconductor | 类似代替 | TO-3 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6059
|
Aeroflex | 类似代替 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
|||
2N6059
|
ON Semiconductor | 类似代替 | TO-204 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
BUX48A
|
ST Microelectronics | 功能相似 | TO-3 |
NTE ELECTRONICS BUX48A Bipolar (BJT) Single Transistor, NPN, 500V, 175W, 20A, 10 hFE
|
||
BUX48A
|
ON Semiconductor | 功能相似 | TO-3 |
NTE ELECTRONICS BUX48A Bipolar (BJT) Single Transistor, NPN, 500V, 175W, 20A, 10 hFE
|
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