Technical parameters/rated voltage (DC): 450 V
Technical parameters/rated current: 15.0 A
Technical parameters/rated power: 175 W
Technical parameters/number of pins: 2
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 175 W
Technical parameters/breakdown voltage (collector emitter): 450 V
Technical parameters/minimum current amplification factor (hFE): 8 @8A, 5V
Technical parameters/rated power (Max): 175 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 175000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-3
External dimensions/length: 39.5 mm
External dimensions/width: 26.2 mm
External dimensions/height: 8.7 mm
External dimensions/packaging: TO-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semelab | 功能相似 | TO-3 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6059
|
Multicomp | 功能相似 | TO-3 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6059
|
Central Semiconductor | 功能相似 | TO-3 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6059
|
Aeroflex | 功能相似 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
|||
2N6059
|
ON Semiconductor | 功能相似 | TO-204 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6338G
|
ON Semiconductor | 功能相似 | TO-204-2 |
高功率NPN硅晶体管 High-Power NPN Silicon Transistors
|
||
BUX48A
|
ST Microelectronics | 类似代替 | TO-3 |
MULTICOMP BUX48A 单晶体管 双极, NPN, 450 V, 175 W, 15 A
|
||
BUX48A
|
ON Semiconductor | 类似代替 | TO-3 |
MULTICOMP BUX48A 单晶体管 双极, NPN, 450 V, 175 W, 15 A
|
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