Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 230 mΩ
Technical parameters/dissipated power: 400 W
Technical parameters/threshold voltage: 5.5 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 3600pF @25V(Vds)
Technical parameters/rated power (Max): 400 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 400W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-268-3
External dimensions/length: 14 mm
External dimensions/width: 16.05 mm
External dimensions/height: 5.1 mm
External dimensions/packaging: TO-268-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFV26N50P
|
IXYS Semiconductor | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 500V 26A 3Pin(3+Tab) PLUS 220
|
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