IXFV26N50P In Stock|PDF|Datasheet|Price|Agent[IXFV26N50P Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

pk Collection Purchase of mobile phones

Model IXFV26N50P

Description Trans MOSFET N-CH 500V 26A 3Pin(3+Tab) PLUS 220

Brand: IXYS Semiconductor

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

PDF

Technical parameters/rated voltage (DC):	500 V
Technical parameters/rated current:	26.0 A
Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	230 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	400 W
Technical parameters/Input capacitance:	3.60 nF
Technical parameters/gate charge:	60.0 nC
Technical parameters/drain source voltage (Vds):	500 V
Technical parameters/Leakage source breakdown voltage:	500 V
Technical parameters/Continuous drain current (Ids):	26.0 A
Technical parameters/rise time:	25 ns
Technical parameters/Input capacitance (Ciss):	3600pF @25V(Vds)
Technical parameters/descent time:	20 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Technical parameters/dissipated power (Max):	400W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	11 mm
Dimensions/Width:	4.7 mm
Dimensions/Height:	15 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Obsolete
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free