Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 830W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 42A
Technical parameters/Input capacitance (Ciss): 5400pF @25V(Vds)
Technical parameters/dissipated power (Max): 830W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH36N50P
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
N 通道功率 MOSFET,IXYS HiperFET™ Polar™ 系列 IXYS N 通道功率 MOSFET,具有快速本征二极管 (HiPerFET™) ### MOSFET 晶体管,IXYS IXYS 的一系列高级离散电源 MOSFET 设备
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||
IXTH36N50P
|
Littelfuse | 功能相似 |
IXYS SEMICONDUCTOR IXTH36N50P 晶体管, MOSFET, 极性FET, N沟道, 36 A, 500 V, 170 mohm, 10 V, 5 V
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