Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 36.0 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.17 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 540 W
Technical parameters/threshold voltage: 5 V
Technical parameters/input capacitance: 5.50 nF
Technical parameters/gate charge: 93.0 nC
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 36.0 A
Technical parameters/rise time: 27 ns
Technical parameters/Input capacitance (Ciss): 5500pF @25V(Vds)
Technical parameters/rated power (Max): 540 W
Technical parameters/descent time: 21 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 540W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 16.26 mm
External dimensions/width: 5.3 mm
External dimensions/height: 21.46 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2016/06/20
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFT36N50P
|
Littelfuse | 完全替代 |
Trans MOSFET N-CH 500V 36A 3Pin(2+Tab) TO-268
|
|||
|
IXTH36N50P
|
Littelfuse | 类似代替 |
IXYS SEMICONDUCTOR IXTH36N50P 晶体管, MOSFET, 极性FET, N沟道, 36 A, 500 V, 170 mohm, 10 V, 5 V
|
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