Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 430W (Tc)
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 200A
Technical parameters/Input capacitance (Ciss): 6800pF @25V(Vds)
Technical parameters/dissipated power (Max): 430W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTA200N075T7
|
IXYS Semiconductor | 功能相似 | TO-263-7 |
MOSFET N-CH 75V 200A TO-263-7
|
||
IXTH200N075T
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
Trans MOSFET N-CH 75V 200A 3Pin(3+Tab) TO-247
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review