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Model IXTA200N075T7
Description MOSFET N-CH 75V 200A TO-263-7
Product QR code
Brand: IXYS Semiconductor
Packaging TO-263-7
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2807) Minimum order quantity(1)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 5 mΩ

Technical parameters/dissipated power: 430 W

Technical parameters/drain source voltage (Vds): 75 V

Technical parameters/leakage source breakdown voltage: 75 V

Technical parameters/rise time: 57 ns

Technical parameters/Input capacitance (Ciss): 6800pF @25V(Vds)

Technical parameters/descent time: 52 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/dissipated power (Max): 430W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-7

External dimensions/length: 10.2 mm

External dimensions/width: 9.4 mm

External dimensions/height: 4.7 mm

External dimensions/packaging: TO-263-7

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXTH200N075T IXTH200N075T IXYS Semiconductor 类似代替 TO-247-3
Trans MOSFET N-CH 75V 200A 3Pin(3+Tab) TO-247
PDF
IXTP200N075T IXTP200N075T IXYS Semiconductor 功能相似 TO-220-3
TO-220 N-CH 75V 200A
PDF

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