Technical parameters/drain source resistance: 0.033 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 960 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/rise time: 175 ns
Technical parameters/Input capacitance (Ciss): 23000pF @25V(Vds)
Technical parameters/rated power (Max): 960 W
Technical parameters/descent time: 160 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 960W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-264-3
External dimensions/packaging: TO-264-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Manufacturing Applications: Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTK82N25P
|
IXYS Semiconductor | 类似代替 | TO-264-3 |
通孔 N 通道 250V 82A（Tc） 500W（Tc） TO-264（IXTK）
|
||
IXTX90N25L2
|
IXYS Semiconductor | 完全替代 | TO-247-3 |
IXYS SEMICONDUCTOR IXTX90N25L2 晶体管, MOSFET, LINEAR L2™, N沟道, 90 A, 250 V, 33 mohm, 10 V, 2 V
|
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