Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.033 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 960 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Continuous drain current (Ids): 90A
Technical parameters/rise time: 175 ns
Technical parameters/Input capacitance (Ciss): 23000pF @25V(Vds)
Technical parameters/rated power (Max): 960 W
Technical parameters/descent time: 160 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 960W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTK90N25L2
|
IXYS Semiconductor | 完全替代 | TO-264-3 |
IXTK 系列 单 N 沟道 250 V 33 mOhm 960 W 功率 MOSFET - TO-264
|
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