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Model IXFV30N60PS
Description Trans MOSFET N-CH 600V 30A 3Pin(2+Tab) PLUS220 SMD
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Brand: IXYS Semiconductor
Packaging PLUS-220-SMD-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3520) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 600 V

Technical parameters/rated current: 30.0 A

Technical parameters/drain source resistance: 240 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 500 W

Technical parameters/input capacitance: 4.00 nF

Technical parameters/gate charge: 82.0 nC

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/Continuous drain current (Ids): 30.0 A

Technical parameters/rise time: 20 ns

Technical parameters/Input capacitance (Ciss): 4000pF @25V(Vds)

Technical parameters/descent time: 25 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 500W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: PLUS-220-SMD-3

External dimensions/length: 11 mm

External dimensions/width: 15 mm

External dimensions/height: 4.7 mm

External dimensions/packaging: PLUS-220-SMD-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXFH30N60P IXFH30N60P IXYS Semiconductor 完全替代 TO-247-3
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IXFT30N60P IXFT30N60P IXYS Semiconductor 类似代替 TO-268-3
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IXTQ30N60P IXTQ30N60P IXYS Semiconductor 类似代替 TO-3-3
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