Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 30.0 A
Technical parameters/drain source resistance: 240 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 500 W
Technical parameters/input capacitance: 4.00 nF
Technical parameters/gate charge: 82.0 nC
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 30.0 A
Technical parameters/Input capacitance (Ciss): 4000pF @25V(Vds)
Technical parameters/dissipated power (Max): 500W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFT30N60P
|
IXYS Semiconductor | 完全替代 | TO-268-3 |
Trans MOSFET N-CH 600V 30A 3Pin(2+Tab) TO-268
|
||
IXFV30N60PS
|
IXYS Semiconductor | 完全替代 | PLUS-220-SMD-3 |
Trans MOSFET N-CH 600V 30A 3Pin(2+Tab) PLUS220 SMD
|
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