Technical parameters/rated voltage (DC): 1.20 kV
Technical parameters/rated current: 3.00 A
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 200 W
Technical parameters/drain source voltage (Vds): 1200 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/Input capacitance (Ciss): 1350pF @25V(Vds)
Technical parameters/rated power (Max): 200 W
Technical parameters/dissipated power (Max): 200W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/width: 9.65 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTA3N110
|
IXYS Semiconductor | 类似代替 | TO-263-3 |
D2PAK N-CH 1100V 3A
|
||
IXTA3N120TRL
|
IXYS Semiconductor | 类似代替 | TO-263-3 |
IXTA Series Single N-Channel 1200V 4.5Ω 200W Power Mosfet - TO-263
|
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