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Model IXTA3N110
Description D2PAK N-CH 1100V 3A
Product QR code
Brand: IXYS Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
29.88  yuan 29.88yuan
5+:
$ 34.9561
50+:
$ 33.4622
200+:
$ 32.6257
500+:
$ 32.4165
1000+:
$ 32.2074
2500+:
$ 31.9684
5000+:
$ 31.8190
7500+:
$ 31.6696
Quantity
5+
50+
200+
500+
1000+
Price
$34.9561
$33.4622
$32.6257
$32.4165
$32.2074
Price $ 34.9561 $ 33.4622 $ 32.6257 $ 32.4165 $ 32.2074
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4178) Minimum order quantity(5)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 4 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 150 W

Technical parameters/drain source voltage (Vds): 1100 V

Technical parameters/leakage source breakdown voltage: 1100 V

Technical parameters/Continuous drain current (Ids): 3A

Technical parameters/rise time: 15 ns

Technical parameters/Input capacitance (Ciss): 1350pF @25V(Vds)

Technical parameters/descent time: 18 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/dissipated power (Max): 150W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 9.9 mm

External dimensions/width: 9.2 mm

External dimensions/height: 4.5 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXTA3N120 IXTA3N120 Littelfuse 功能相似
Power Field-Effect Transistor,
IXTA3N120 IXTA3N120 IXYS Semiconductor 功能相似 TO-263-3
Power Field-Effect Transistor,
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