Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 360 W
Technical parameters/drain source voltage (Vds): 85 V
Technical parameters/Continuous drain current (Ids): 152A
Technical parameters/rise time: 50 ns
Technical parameters/Input capacitance (Ciss): 5500pF @25V(Vds)
Technical parameters/rated power (Max): 360 W
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 360W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-7
External dimensions/length: 10.2 mm
External dimensions/width: 9.4 mm
External dimensions/height: 4.7 mm
External dimensions/packaging: TO-263-7
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTA152N085T
|
IXYS Semiconductor | 功能相似 | TO-263-3 |
D2PAK N-CH 85V 152A
|
||
IXTP152N085T
|
IXYS Semiconductor | 功能相似 | TO-220-3 |
TO-220 N-CH 85V 152A
|
||
IXTQ152N085T
|
IXYS Semiconductor | 类似代替 | TO-3-3 |
TO-3P N-CH 85V 152A
|
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