Technical parameters/drain source resistance: 7.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 360W (Tc)
Technical parameters/drain source voltage (Vds): 85 V
Technical parameters/Continuous drain current (Ids): 152A
Technical parameters/Input capacitance (Ciss): 5500pF @25V(Vds)
Technical parameters/dissipated power (Max): 360W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTA152N085T
|
IXYS Semiconductor | 功能相似 | TO-263-3 |
D2PAK N-CH 85V 152A
|
||
IXTA152N085T7
|
IXYS Semiconductor | 功能相似 | TO-263-7 |
D2PAK N-CH 85V 152A
|
||
IXTH152N085T
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
TO-247 N-CH 85V 152A
|
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