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Model IXSN80N60BD1
Description Trans IGBT Chip N-CH 600V 160A 420000mW 4Pin SOT-227B
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Brand: IXYS Semiconductor
Packaging SOT-227-4
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3767) Minimum order quantity(1)
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Technical parameters/dissipated power: 420000 mW

Technical parameters/breakdown voltage (collector emitter): 600 V

Technical parameters/Input capacitance (Cies): 6.6nF @25V

Technical parameters/rated power (Max): 420 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 420000 mW

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-227-4

External dimensions/packaging: SOT-227-4

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXXN100N60B3H1 IXXN100N60B3H1 IXYS Semiconductor 类似代替 SOT-227-4
Trans IGBT Chip N-CH 600V 440A 500000mW 4Pin SOT-227B
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