Technical parameters/dissipated power: 500000 mW
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/Input capacitance (Cies): 4.86nF @25V
Technical parameters/rated power (Max): 500 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500000 mW
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-227-4
External dimensions/packaging: SOT-227-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXSN52N60AU1
|
IXYS Semiconductor | 类似代替 | SOT-227-4 |
Trans IGBT Chip N-CH 600V 80A 4Pin SOT-227B
|
||
IXSN80N60BD1
|
IXYS Semiconductor | 类似代替 | SOT-227-4 |
Trans IGBT Chip N-CH 600V 160A 420000mW 4Pin SOT-227B
|
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