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Model IXSH40N60B
Description Trans IGBT Chip N-CH 600V 75A 280000mW 3Pin(3+Tab) TO-247AD
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Brand: IXYS Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6643) Minimum order quantity(1)
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Technical parameters/dissipated power: 280000 mW

Technical parameters/breakdown voltage (collector emitter): 600 V

Technical parameters/rated power (Max): 280 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 280000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/height: 21.46 mm

External dimensions/packaging: TO-247-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXXH50N60B3 IXXH50N60B3 IXYS Semiconductor 类似代替 TO-247-3
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3Pin
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