Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/rated power (Max): 600 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 600000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXSH40N60A
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
IGBT 晶体管 HIGH SPEED IGBT 600V, 40A
|
||
IXSH40N60B
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
Trans IGBT Chip N-CH 600V 75A 280000mW 3Pin(3+Tab) TO-247AD
|
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