Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 165 mΩ
Technical parameters/dissipated power: 250 W
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Input capacitance (Ciss): 2000pF @100V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.66 mm
External dimensions/width: 4.82 mm
External dimensions/height: 9.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXKH24N60C5
|
IXYS Semiconductor | 功能相似 | TO-3-3 |
Trans MOSFET N-CH 600V 24A 3Pin(3+Tab) TO-247AD
|
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