Technical parameters/dissipated power: -
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Input capacitance (Ciss): 2000pF @100V(Vds)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXKP24N60C5
|
IXYS Semiconductor | 功能相似 | TO-220-3 |
MOSFET N-CH 600V 24A TO220AB
|
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