Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 300 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 80A
Technical parameters/rise time: 63 ns
Technical parameters/Input capacitance (Ciss): 4800pF @25V(Vds)
Technical parameters/descent time: 26 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 16.26 mm
External dimensions/width: 5.3 mm
External dimensions/height: 21.46 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFT80N10
|
IXYS Semiconductor | 类似代替 | TO-268-2 |
TO-268 N-CH 100V 80A
|
||
IXTP80N10T
|
IXYS Semiconductor | 功能相似 | TO-220-3 |
IXTP80N10T 管装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review