Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 14 mΩ
Technical parameters/dissipated power: 230 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/rise time: 54 ns
Technical parameters/Input capacitance (Ciss): 3040pF @25V(Vds)
Technical parameters/rated power (Max): 230 W
Technical parameters/descent time: 48 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 230W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.66 mm
External dimensions/width: 4.83 mm
External dimensions/height: 9.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH80N10
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
TO-247AD N-CH 100V 80A
|
||
IXFT80N10
|
IXYS Semiconductor | 类似代替 | TO-268-2 |
TO-268 N-CH 100V 80A
|
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