Technical parameters/dissipated power: 200000 mW
Technical parameters/breakdown voltage (collector emitter): 900 V
Technical parameters/rated power (Max): 200 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 16.26 mm
External dimensions/width: 5.3 mm
External dimensions/height: 21.46 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRG4PF50WD-201P
|
Infineon | 类似代替 | TO-247-3 |
Trans IGBT Chip N-CH 900V 51A 3Pin(3+Tab) TO-247AC
|
||
IRG4PF50WD-201P
|
International Rectifier | 类似代替 | TO-247-3 |
Trans IGBT Chip N-CH 900V 51A 3Pin(3+Tab) TO-247AC
|
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