Technical parameters/breakdown voltage (collector emitter): 900 V
Technical parameters/reverse recovery time: 90 ns
Technical parameters/rated power (Max): 200 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXGH28N90B
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
Trans IGBT Chip N-CH 900V 51A 200000mW 3Pin(3+Tab) TO-247AD
|
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