Technical parameters/dissipated power: 180000 mW
Technical parameters/breakdown voltage (collector emitter): 1200 V
Technical parameters/rated power (Max): 180 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 180000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXGA12N60B
|
IXYS Semiconductor | 类似代替 | TO-263-3 |
IGBT 晶体管 24 Amps 600V 2.1 Rds
|
||
IXGA16N60B2
|
IXYS Semiconductor | 类似代替 | TO-263-3 |
IGBT 600V 40A 150W TO263
|
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