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Model IXGA16N60B2
Description IGBT 600V 40A 150W TO263
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Brand: IXYS Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2439) Minimum order quantity(1)
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Technical parameters/breakdown voltage (collector emitter): 600 V

Technical parameters/rated power (Max): 150 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 9.9 mm

External dimensions/width: 9.2 mm

External dimensions/height: 4.5 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXGA20N120B3 IXGA20N120B3 IXYS Semiconductor 类似代替 TO-263-3
Trans IGBT Chip N-CH 1200V 36A 180000mW 3Pin(2+Tab) D2PAK
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