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Model IXGA12N120A2
Description Trans IGBT Chip N-CH 1200V 24A 75000mW 3Pin(2+Tab) TO-263AA
Product QR code
Brand: IXYS Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
18.06  yuan 18.06yuan
5+:
$ 21.1255
50+:
$ 20.2227
200+:
$ 19.7172
500+:
$ 19.5908
1000+:
$ 19.4644
2500+:
$ 19.3199
5000+:
$ 19.2296
7500+:
$ 19.1394
Quantity
5+
50+
200+
500+
1000+
Price
$21.1255
$20.2227
$19.7172
$19.5908
$19.4644
Price $ 21.1255 $ 20.2227 $ 19.7172 $ 19.5908 $ 19.4644
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4609) Minimum order quantity(5)
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Technical parameters/dissipated power: 75000 mW

Technical parameters/breakdown voltage (collector emitter): 1200 V

Technical parameters/rated power (Max): 75 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 75000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.29 mm

External dimensions/width: 9.65 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXGA12N120A3 IXGA12N120A3 IXYS Semiconductor 类似代替 TO-263-3
IGBT 晶体管 1200V, 12A IGBT; G Series
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