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Model IXGA12N120A3
Description IGBT Transistor 1200V, 12A IGBT; G Series
Product QR code
Brand: IXYS Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
31.16  yuan 31.16yuan
1+:
$ 38.0152
10+:
$ 35.8340
100+:
$ 34.2137
250+:
$ 33.9644
500+:
$ 33.7151
1000+:
$ 33.4347
2500+:
$ 33.1854
5000+:
$ 33.0296
Quantity
1+
10+
100+
250+
500+
Price
$38.0152
$35.8340
$34.2137
$33.9644
$33.7151
Price $ 38.0152 $ 35.8340 $ 34.2137 $ 33.9644 $ 33.7151
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1879) Minimum order quantity(1)
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Technical parameters/dissipated power: 100 W

Technical parameters/breakdown voltage (collector emitter): 1200 V

Technical parameters/rated power (Max): 100 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 100000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 9.65 mm

External dimensions/width: 10.41 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXGA12N120A2 IXGA12N120A2 IXYS Semiconductor 类似代替 TO-263-3
Trans IGBT Chip N-CH 1200V 24A 75000mW 3Pin(2+Tab) TO-263AA
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