Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 36.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 170 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 540 W
Technical parameters/input capacitance: 5.50 nF
Technical parameters/gate charge: 93.0 nC
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 36.0 A
Technical parameters/rise time: 27 ns
Technical parameters/Input capacitance (Ciss): 5500pF @25V(Vds)
Technical parameters/descent time: 21 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 540W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 11 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH36N50P
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IXTH36N50P
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Littelfuse | 功能相似 |
IXYS SEMICONDUCTOR IXTH36N50P 晶体管, MOSFET, 极性FET, N沟道, 36 A, 500 V, 170 mohm, 10 V, 5 V
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