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Model IXFR36N60P
Description IXYS SEMICONDUCTOR IXFR36N60P Power Field Effect Transistor, MOSFET, N-channel, 20 A, 600 V, 200 Mohm, 10 V, 5 V
Product QR code
Brand: IXYS Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
3.28  yuan 3.28yuan
5+:
$ 4.4307
25+:
$ 4.1025
50+:
$ 3.8728
100+:
$ 3.7743
500+:
$ 3.7087
2500+:
$ 3.6266
5000+:
$ 3.5938
10000+:
$ 3.5446
Quantity
5+
25+
50+
100+
500+
Price
$4.4307
$4.1025
$3.8728
$3.7743
$3.7087
Price $ 4.4307 $ 4.1025 $ 3.8728 $ 3.7743 $ 3.7087
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3515) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 600 V

Technical parameters/rated current: 36.0 A

Technical parameters/number of channels: 1

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.2 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 208 W

Technical parameters/threshold voltage: 5 V

Technical parameters/input capacitance: 5.80 nF

Technical parameters/gate charge: 102 nC

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/Continuous drain current (Ids): 20.0 A

Technical parameters/rise time: 25 ns

Technical parameters/isolation voltage: 2.50 kV

Technical parameters/Input capacitance (Ciss): 5800pF @25V(Vds)

Technical parameters/rated power (Max): 208 W

Technical parameters/descent time: 22 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 208W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/length: 16.13 mm

External dimensions/width: 5.21 mm

External dimensions/height: 21.34 mm

External dimensions/packaging: TO-247-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Industrial, Industry, Power Management, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SPA20N60CFD SPA20N60CFD Infineon 功能相似 TO-220
INFINEON SPA20N60CFD 功率场效应管, MOSFET, N沟道, 20.7 A, 600 V, 0.19 ohm, 10 V, 4 V

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