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Model SPA20N60CFD

Description INFINEON SPA20N60CFD 功率场效应管, MOSFET, N沟道, 20.7 A, 600 V, 0.19 ohm, 10 V, 4 V

Brand: Infineon

Packaging TO-220

Delivery time

Packaging method

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.19 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	35 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	600 V
Technical parameters/Continuous drain current (Ids):	20.7A
Technical parameters/rise time:	15 ns
Technical parameters/Input capacitance (Ciss):	2400pF @25V(Vds)
Technical parameters/rated power (Max):	35 W
Technical parameters/descent time:	6.4 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220
Dimensions/Length:	10.65 mm
Dimensions/Width:	4.85 mm
Dimensions/Height:	16.15 mm
Dimensions/Packaging:	TO-220
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Not Recommended
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	IXFR36N60P	IXYS Semiconductor	功能相似	TO-247-3	IXYS SEMICONDUCTOR IXFR36N60P 功率场效应管, MOSFET, N沟道, 20 A, 600 V, 200 mohm, 10 V, 5 V	PDF