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Model IXFN44N100Q3
Description N Channel power MOSFET, IXYS HiperFET ™ Q3 series HiperFET ™ The IXYS Q3 class of Power MOSFET is highly suitable for hard switching and resonant mode applications, providing low gate charges with excellent strength. This device includes a fast intrinsic diode and offers various industry standard packages, including isolation types, with ratings up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch mode and resonant mode power supplies, DC choppers, temperature and lighting controls. Fast intrinsic rectifier diodes with low RDS (turn-on) and QG (gate charge), low intrinsic gate resistance, industrial standard packaging, low package inductance, high power density, MOSFET transistors, IXYS IXYS series of advanced discrete power MOSFET devices
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Brand: IXYS Semiconductor
Packaging SOT-227-4
Delivery time
Packaging method Tube
Standard packaging quantity 1
385.55  yuan 385.55yuan
1+:
$ 443.3837
10+:
$ 431.8171
50+:
$ 422.9494
100+:
$ 419.8650
200+:
$ 417.5517
500+:
$ 414.4673
1000+:
$ 412.5396
2000+:
$ 410.6118
Quantity
1+
10+
50+
100+
200+
Price
$443.3837
$431.8171
$422.9494
$419.8650
$417.5517
Price $ 443.3837 $ 431.8171 $ 422.9494 $ 419.8650 $ 417.5517
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7392) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 960W (Tc)

Technical parameters/drain source voltage (Vds): 1000 V

Technical parameters/Continuous drain current (Ids): 38A

Technical parameters/rise time: 30 ns

Technical parameters/Input capacitance (Ciss): 13600pF @25V(Vds)

Technical parameters/descent time: 28 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 960W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-227-4

External dimensions/length: 38.23 mm

External dimensions/width: 25.07 mm

External dimensions/height: 9.6 mm

External dimensions/packaging: SOT-227-4

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXFN38N100P IXFN38N100P IXYS Semiconductor 类似代替 SOT-227-4
IXFN 系列 单 N 沟道 1000 Vds 210 mOhm 1000 W 功率 Mosfet - SOT-227B
IXFN44N100P IXFN44N100P IXYS Semiconductor 类似代替 SOT-227-4
IXFN 系列 单 N 沟道 1000 Vds 220 mOhm 890 W 功率 Mosfet - SOT-227B
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