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Model IXFN38N100P

Description IXFN 系列单 N 沟道 1000 Vds 210 mOhm 1000 W 功率 Mosfet - SOT-227B

Brand: IXYS Semiconductor

Packaging SOT-227-4

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(8309) Minimum order quantity(1)

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Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	210 mΩ
Technical parameters/polarity:	N-CH
Technical parameters/dissipated power:	1 kW
Technical parameters/drain source voltage (Vds):	1000 V
Technical parameters/Leakage source breakdown voltage:	1000 V
Technical parameters/Continuous drain current (Ids):	38A
Technical parameters/rise time:	55 ns
Technical parameters/Input capacitance (Ciss):	24000pF @25V(Vds)
Technical parameters/rated power (Max):	1000 W
Technical parameters/descent time:	40 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1000W (Tc)
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	SOT-227-4
Dimensions/Length:	38.23 mm
Dimensions/Width:	25.42 mm
Dimensions/Height:	9.6 mm
Dimensions/Packaging:	SOT-227-4
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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