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Model IXFB44N100Q3
Description N Channel power MOSFET, IXYS HiperFET ™ Q3 series HiperFET ™ The IXYS Q3 class of Power MOSFET is highly suitable for hard switching and resonant mode applications, providing low gate charges with excellent strength. This device includes a fast intrinsic diode and offers various industry standard packages, including isolation types, with ratings up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch mode and resonant mode power supplies, DC choppers, temperature and lighting controls. Fast intrinsic rectifier diodes with low RDS (turn-on) and QG (gate charge), low intrinsic gate resistance, industrial standard packaging, low package inductance, high power density, MOSFET transistors, IXYS IXYS series of advanced discrete power MOSFET devices
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Brand: IXYS Semiconductor
Packaging TO-264-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
261.58  yuan 261.58yuan
1+:
$ 300.8113
10+:
$ 292.9640
50+:
$ 286.9478
100+:
$ 284.8552
200+:
$ 283.2857
500+:
$ 281.1931
1000+:
$ 279.8853
2000+:
$ 278.5774
Quantity
1+
10+
50+
100+
200+
Price
$300.8113
$292.9640
$286.9478
$284.8552
$283.2857
Price $ 300.8113 $ 292.9640 $ 286.9478 $ 284.8552 $ 283.2857
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9482) Minimum order quantity(1)
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Technical parameters/dissipated power: 1560 W

Technical parameters/drain source voltage (Vds): 1000 V

Technical parameters/rise time: 30 ns

Technical parameters/Input capacitance (Ciss): 13600pF @25V(Vds)

Technical parameters/descent time: 28 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1560W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-264-3

External dimensions/length: 20.29 mm

External dimensions/width: 5.31 mm

External dimensions/height: 26.59 mm

External dimensions/packaging: TO-264-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXFK40N90P IXFK40N90P IXYS Semiconductor 类似代替 TO-264-3
TO-264 N-CH 900V 40A
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