Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 380W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 20A
Technical parameters/Input capacitance (Ciss): 1800pF @25V(Vds)
Technical parameters/dissipated power (Max): 380W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH20N50P3
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
IXYS SEMICONDUCTOR IXFH20N50P3 晶体管, MOSFET, N沟道, 20 A, 500 V, 0.3 ohm, 10 V, 5 V
|
||
IXFP20N50P3
|
IXYS Semiconductor | 类似代替 | TO-220-3 |
N-CH 500V 20A
|
||
IXFQ20N50P3
|
IXYS Semiconductor | 功能相似 | TO-3-3 |
N 通道功率 MOSFET,IXYS HiperFET™ Polar3™ 系列 一系列 IXYS Polar3™ 系列 N 通道功率 MOSFET,具有快速本征二极管 (HiPerFET™) ### MOSFET 晶体管,IXYS IXYS 的一系列高级离散电源 MOSFET 设备
|
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