Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 380W (Tc) |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Continuous drain current (Ids): | 20A |
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Technical parameters/Input capacitance (Ciss): | 1800pF @25V(Vds) |
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Technical parameters/dissipated power (Max): | 380W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFA20N50P3
|
IXYS Semiconductor | 类似代替 | TO-263-3 |
TO-263AA N-CH 500V 20A
|
||
IXFH20N50P3
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
IXYS SEMICONDUCTOR IXFH20N50P3 晶体管, MOSFET, N沟道, 20 A, 500 V, 0.3 ohm, 10 V, 5 V
|
||
IXFQ20N50P3
|
IXYS Semiconductor | 功能相似 | TO-3-3 |
N 通道功率 MOSFET，IXYS HiperFET™ Polar3™ 系列 一系列 IXYS Polar3™ 系列 N 通道功率 MOSFET，具有快速本征二极管 (HiPerFET™) ### MOSFET 晶体管，IXYS IXYS 的一系列高级离散电源 MOSFET 设备
|
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