Technical parameters/rise/fall time: 26ns, 18ns
Technical parameters/number of output interfaces: 4
Technical parameters/output current: 3 A
Technical parameters/dissipated power: 2 W
Technical parameters/rise time: 26 ns
Technical parameters/descent time: 18 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/power supply voltage: 7V ~ 13.2V
Technical parameters/power supply voltage (Max): 13.2 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: QFN-16
External dimensions/length: 4 mm
External dimensions/width: 4 mm
External dimensions/height: 0.95 mm
External dimensions/packaging: QFN-16
Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL6614BCRZ-T
|
Intersil | 类似代替 | QFN-16 |
与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
|
||
ISL6614BCRZ-T
|
Renesas Electronics | 类似代替 | QFN-16 |
与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
|
||
ISL6614BIRZ
|
Intersil | 完全替代 | QFN-16 |
与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
|
||
ISL6614BIRZ
|
Harris | 完全替代 |
与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
|
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