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Model ISL6614BCRZ-T

Description 与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

Brand: Intersil

Packaging QFN-16

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rise/fall time:	26ns, 18ns
Technical parameters/number of output interfaces:	4
Technical parameters/output current:	3 A
Technical parameters/dissipated power:	2 W
Technical parameters/rise time:	26 ns
Technical parameters/descent time:	18 ns
Technical parameters/operating temperature (Max):	85 ℃
Technical parameters/operating temperature (Min):	0 ℃
Technical parameters/dissipated power (Max):	2000 mW
Technical parameters/power supply voltage:	7V ~ 13.2V
Technical parameters/power supply voltage (Max):	13.2 V
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	16
Encapsulation parameters/Encapsulation:	QFN-16
Dimensions/Length:	4 mm
Dimensions/Width:	4 mm
Dimensions/Height:	0.95 mm
Dimensions/Packaging:	QFN-16
Physical parameters/operating temperature:	0℃ ~ 125℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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ISL6614BCRZ-T	Intersil	类似代替	QFN-16	与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP	PDF
ISL6614BCRZ-T	Renesas Electronics	类似代替	QFN-16	与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP	PDF
ISL6614BIRZ	Intersil	功能相似	QFN-16	与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP	PDF
ISL6614BIRZ	Harris	功能相似		与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6614BIRZ-T	Intersil	功能相似	QFN-16	与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP	PDF