Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 3 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 110 W
Technical parameters/input capacitance: 3800 pF
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/rise time: 85 ns
Technical parameters/Input capacitance (Ciss): 3800pF @25V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK662R5-30C,118
|
NXP | 功能相似 | TO-263-3 |
D2PAK N-CH 30V 100A
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STB155N3LH6
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ST Microelectronics | 完全替代 | TO-263-3 |
N沟道30 V ， 2.4 MI © ， 80 A， DPAK ， DPAK STripFETVI DeepGATE功率MOSFET N-channel 30 V, 2.4 mΩ , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET
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