Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 204 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 100A |
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Technical parameters/rise time: | 59 ns |
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Technical parameters/Input capacitance (Ciss): | 6960pF @25V(Vds) |
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Technical parameters/rated power (Max): | 204 W |
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Technical parameters/descent time: | 113 ns |
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Technical parameters/dissipated power (Max): | 204W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Rochester | 功能相似 | TO-263 |
FAIRCHILD SEMICONDUCTOR FDB8860 晶体管, MOSFET, N沟道, 31 A, 30 V, 1.6 mohm, 10 V, 1.7 V
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||
STD155N3LH6
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 STripFET™ DeepGate™,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
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