Technical parameters/polarity: N-Channel
Technical parameters/product series: IRLR8259
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/Input capacitance (Ciss): 900pF @13V(Vds)
Technical parameters/rated power (Max): 48 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR3707ZPBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRFR3707ZPBF 晶体管, MOSFET, N沟道, 56 A, 30 V, 9.5 mohm, 10 V, 1.8 V
|
||
IRFR3707ZPBF
|
IRF | 类似代替 |
INFINEON IRFR3707ZPBF 晶体管, MOSFET, N沟道, 56 A, 30 V, 9.5 mohm, 10 V, 1.8 V
|
|||
IRFR3707ZTRPBF
|
Infineon | 类似代替 | TO-252-3 |
HEXFET® N 通道功率 MOSFET 超过 55A,Infineon ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
|
||
IRFR3707ZTRPBF
|
International Rectifier | 类似代替 | TO-252-3 |
HEXFET® N 通道功率 MOSFET 超过 55A,Infineon ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
|
||
IRLR8259PBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRLR8259PBF 晶体管, MOSFET, N沟道, 21 A, 25 V, 0.0063 ohm, 10 V, 1.9 V
|
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