Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 56.0 A
Technical parameters/drain source resistance: 12.5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 50 W
Technical parameters/product series: IRFR3707Z
Technical parameters/threshold voltage: 1.8 V
Technical parameters/input capacitance: 1150pF @15V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 56.0 A
Technical parameters/rise time: 11.0 ns
Technical parameters/Input capacitance (Ciss): 1150pF @15V(Vds)
Technical parameters/rated power (Max): 50 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/height: 2.26 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD40NF03LT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD40NF03LT4 晶体管, MOSFET, N沟道, 20 A, 30 V, 9 mohm, 10 V, 1 V
|
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