Encapsulation parameters/installation method: Through Hole
Other/Packaging Methods: Tube
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Infineon | 功能相似 |
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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IRLZ34
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NXP | 功能相似 |
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Philips | 功能相似 |
N沟道增强模式的逻辑电平的TrenchMOS晶体管 N-channel enhancement mode Logic level TrenchMOS transistor
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IRLZ34N
|
Major Brands | 功能相似 | TO-220 |
N沟道增强模式的逻辑电平的TrenchMOS晶体管 N-channel enhancement mode Logic level TrenchMOS transistor
|
||
IRLZ34N,127
|
NXP | 功能相似 |
MOSFET RAIL PWR-MOS
|
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