Technical parameters/rise time: | 100 ns |
|
Technical parameters/descent time: | 29 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 68000 mW |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Packaging: | TO-220 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
|||
IRLZ34
|
NXP | 功能相似 |
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
|||
|
|
IFA | 功能相似 |
INFINEON IRLZ34NPBF 晶体管, MOSFET, N沟道, 27 A, 55 V, 35 mohm, 10 V, 2 V
|
|||
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|
IFC | 功能相似 |
INFINEON IRLZ34NPBF 晶体管, MOSFET, N沟道, 27 A, 55 V, 35 mohm, 10 V, 2 V
|
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