Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 11.0 A
Technical parameters/polarity: N-CH
Technical parameters/product series: IRLR120N
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100V (min)
Technical parameters/Continuous drain current (Ids): 10.0 A
Technical parameters/rise time: 35 ns
Technical parameters/Input capacitance (Ciss): 440pF @25V(Vds)
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 48000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR120NPBF
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Infineon | 功能相似 | TO-252-3 |
N 通道功率 MOSFET 8A 至 12A，Infineon Infineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备，采用表面安装和引线封装。 形状系数可解决大多数板布局和热设计挑战问题。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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IRLR120NTRLPBF
|
Infineon | 功能相似 | TO-252-3 |
单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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IRLR120NTRLPBF
|
International Rectifier | 功能相似 | TO-252-3 |
单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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IRLR120NTRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRLR120NTRPBF 晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
|
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