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Model IRLR120NPBF
Description N Channel power MOSFETs 8A to 12A, Infineon Infineon series split HEXFET ® Power MOSFETs include N-channel devices, which are surface mounted and lead packaged. The shape factor can solve most board layout and thermal design challenges. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0.71  yuan 0.71yuan
10+:
$ 0.9599
50+:
$ 0.9101
100+:
$ 0.8745
300+:
$ 0.8532
500+:
$ 0.8319
1000+:
$ 0.8105
2500+:
$ 0.7785
5000+:
$ 0.7714
Quantity
10+
50+
100+
300+
500+
Price
$0.9599
$0.9101
$0.8745
$0.8532
$0.8319
Price $ 0.9599 $ 0.9101 $ 0.8745 $ 0.8532 $ 0.8319
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1958) Minimum order quantity(10)
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Technical parameters/rated power: 39 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.185 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 48 W

Technical parameters/threshold voltage: 2 V

Technical parameters/input capacitance: 440pF @25V

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/Continuous drain current (Ids): 10A

Technical parameters/rise time: 35 ns

Technical parameters/Input capacitance (Ciss): 440pF @25V(Vds)

Technical parameters/descent time: 22 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 48W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRLR120NPBF IRLR120NPBF Infineon 类似代替 TO-252-3
N 通道功率 MOSFET 8A 至 12A，Infineon Infineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备，采用表面安装和引线封装。 形状系数可解决大多数板布局和热设计挑战问题。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
PDF
IRLR120NTRPBF IRLR120NTRPBF International Rectifier 类似代替 TO-252-3
INFINEON IRLR120NTRPBF 晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
PDF

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