Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 3.20 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.7W (Ta)
Technical parameters/product series: IRLMS1902
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 3.20 A
Technical parameters/rise time: 11.0 ns
Technical parameters/Input capacitance (Ciss): 300pF @15V(Vds)
Technical parameters/dissipated power (Max): 1.7W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-6
External dimensions/packaging: SOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9956PBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON IRF9956PBF 双路场效应管, MOSFET, 双N沟道, 3.5 A, 30 V, 100 mohm, 10 V, 1 V
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IRF9956TRPBF
|
Infineon | 功能相似 | SOIC-8 |
IRF9956TRPBF 编带
|
||
IRLMS1902TRPBF
|
International Rectifier | 类似代替 | TSOP-6 |
HEXFET® N 通道功率 MOSFET 最大 50A，Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 N 通道设备，用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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